Electron transport in p-GaAs is studied in detail using an ensemble Monte Carlo calculation. Carrier- carrier interactions, such as electron-electron, hole-hole and electron-hole, are taken into account. Not only electrons but also holes are analyzed to obtain their exact distribution functions. For drift velocity and temperature of minority- electrons in p-GaAs, the calculated results shows good agreement with experimental data by accurately including field dependent carrier-carrier interactions. Throughout the study, it is demonstrated that the interaction with holes is essential for electron transport in p-GaAs.
雑誌書誌ID
収録物識別子タイプ
NCID
収録物識別子
AN10420713
書誌情報
日本女子大学紀要. 理学部
en : Journal of Japan Women's University. Faculty of science
KJ00000195576.pdf (775.6 kB)
